PE2305 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
PE2305
Rev. A.2
D G
S Schematic diagram
* High Power and current handing capability.
GENERAL FEATURES
* VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
PE2305
Rev. A.2
D G
.
The PE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -20V,ID = .
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